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Ductile P-Type AgCu(Se,S,Te) Thermoelectric Materials.

Kelin Shen^1,2, Qingyu Yang^1,2, Pengfei Qiu^1,2,3

¹State Key Laboratory of High Performance Ceramics and Superfine Microstructure, Shanghai Institute of Ceramics, Chinese Academy of Sciences, Shanghai, 200050, China.

Advanced Materials (Deerfield Beach, Fla.)

|July 5, 2024

Summary

Ductile inorganic thermoelectric materials enable flexible devices. Researchers mapped AgCu(Se,S,Te) compositions, identifying optimal ranges for high-performance, flexible thermoelectric devices with a maximum figure of merit (zT) of 0.81.

Keywords:

crystal structure ductile phase diagram thermoelectric

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Demonstrating the Simplicity and In Situ Temperature Monitoring of the Mechanochemical Synthesis of Metal Chalcogenides Suitable for Thermoelectrics

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Published on: August 30, 2024

Area of Science:

Materials Science
Solid-State Physics
Inorganic Chemistry

Background:

Ductile inorganic thermoelectric (TE) materials are crucial for flexible TE devices.
AgCu(Se,S,Te) pseudoternary solid solutions offer complex properties but lack clear composition-structure-property relationships.
Existing research on these materials is limited, hindering optimization for device applications.

Purpose of the Study:

To systematically investigate the phase composition, crystal structure, mechanical, and TE properties of AgCu(Se,S,Te) pseudoternary solid solutions.
To construct comprehensive composition-structure-property phase diagrams for the AgCuSe-AgCuS-AgCuTe system.
To identify composition ranges yielding high TE performance and inherent ductility for flexible device applications.

Main Methods:

Synthesis and characterization of approximately 60 AgCu(Se,S,Te) pseudoternary solid solutions.
Systematic investigation of phase composition, crystal structure, mechanical properties, and thermoelectric performance.
Construction of phase diagrams and determination of ductile-brittle and n-p transition boundaries.

Main Results:

Comprehensive composition-structure-property phase diagrams for the AgCuSe-AgCuS-AgCuTe system were established.
Ductile-brittle and n-p transition boundaries were mapped, identifying optimal composition ranges.
High-performance p-type ductile TE materials achieved a maximum figure of merit (zT) of 0.81 at 340 K.
Flexible in-plane TE devices fabricated from these materials demonstrated superior output performance compared to existing flexible TE devices.

Conclusions:

The study provides a clear understanding of the composition-structure-property relationships in AgCu(Se,S,Te) materials.
High-performance ductile thermoelectric materials were successfully developed for flexible TE device applications.
The fabricated flexible TE devices exhibit promising performance, surpassing organic and hybrid alternatives.