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MOS Capacitor

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A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
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Related Experiment Video

Updated: Jun 21, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx

Published on: May 13, 2020

Sliding Memristor in Parallel-Stacked Hexagonal Boron Nitride.

Shuang Du¹, Wenqi Yang¹, Huiying Gao¹

¹Centre for Quantum Physics, Key Laboratory of Advanced Optoelectronic Quantum Architecture and Measurement (MOE), School of Physics, Beijing Institute of Technology, Beijing, 100081, China.

Advanced Materials (Deerfield Beach, Fla.)

|July 8, 2024

Summary

Researchers developed a novel sliding memristor using 2D materials. This device shows stable memory behavior due to ion migration, paving the way for advanced electronic memory applications.

Keywords:

ion migration memristor sliding ferroelectricity tunneling van der Waals heterostructures

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Last Updated: Jun 21, 2025

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Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Assembly and Characterization of Biomolecular Memristors Consisting of Ion Channel-doped Lipid Membranes

Published on: March 9, 2019

Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Sliding ferroelectricity in 2D materials offers atomic-scale polarization control.
Challenges exist in understanding mechanisms and device complexity for practical applications.

Purpose of the Study:

To present a sliding memristor based on a graphene/hexagonal boron nitride/graphene tunneling device.
To demonstrate stable memristive hysteresis and explore its underlying mechanisms.

Main Methods:

Fabrication of a graphene/hexagonal boron nitride/graphene tunneling device.
Investigation of memristive behavior under varying tunneling current densities.
Theoretical calculations to support experimental observations.

Main Results:

Achieved a stable memristive hysteresis with an on/off ratio of approximately 10^3.
Observed a two-order decrease in trigger current density with increasing current.
Attributed memristive behavior to interlayer boron ion migration and conductive filament formation.

Conclusions:

The study presents a viable sliding memristor utilizing a tunneling device architecture.
Findings bridge the gap between sliding ferroelectricity and practical memory applications.
Opens new avenues for exploring 2D material-based memristors.