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Updated: Jun 21, 2025

Ohmic Contact Fabrication Using a Focused-ion Beam Technique and Electrical Characterization for Layer Semiconductor Nanostructures
Published on: December 5, 2015
Innovations of metallic contacts on semiconducting 2D transition metal dichalcogenides toward advanced 3D-structured
Byeongchan Kim1, Seojoo Lee1, Jin-Hong Park1,2
1Department of Electrical and Computer Engineering, Sungkyunkwan University (SKKU), Suwon, 16419, Korea. jhpark9@skku.edu.
Abstract:
2D semiconductors, represented by transition metal dichalcogenides (TMDs), have the potential to be alternative channel materials for advanced 3D field-effect transistors, such as gate-all-around field-effect-transistors (GAAFETs) and complementary field-effect-transistors (C-FETs), due to their inherent atomic thinness, moderate mobility, and short scaling lengths. However, 2D semiconductors encounter several technological challenges, especially the high contact resistance issue between 2D semiconductors and metals. This review provides a comprehensive overview of the high contact resistance issue in 2D semiconductors, including its physical background and the efforts to address it, with respect to their applicability to GAAFET structures.
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