Trap Depth Engineering from Persistent Luminescence Phosphors Mg_2-ZnSnO

Area of Science:

• Materials Science
• Information Security
• Solid-State Chemistry

Background:

• Traditional fluorescent/phosphorescent encryption materials are vulnerable to counterfeiting due to static reading modes.
• Advances in counterfeiting technology necessitate more robust and dynamic information security solutions.

Purpose of the Study:

• To develop novel Mg2-xZnxSnO4 materials for dynamic information encryption.
• To investigate the relationship between Zn2+ ion concentration and material properties for data writing, reading, and erasing.
• To design a functional encryption device based on the developed materials.

Main Methods:

• Synthesis of Mg2-xZnxSnO4 materials with varying Zn2+ concentrations (x = 0.55 to 0.8).
• Characterization of material emission properties under thermal stimulation.
• Analysis of the shallow to deep trap ratio and its influence on information retrieval.
• Fabrication of an encryption binary codes device.

Main Results:

• The synthesized Mg2-xZnxSnO4 materials exhibit dynamic emission changes upon heating to 90 °C, dependent on Zn2+ concentration.
• The ratio of shallow to deep traps increases from 7.77 to 20.86 with increasing Zn2+ doping.
• Optimized Zn2+ concentration (x = 0.80) facilitates easier information reading due to a higher proportion of shallow traps.
• A functional encryption device demonstrated dynamic writing, reading, and erasing of information under ambient and heating conditions.

Conclusions:

• The developed Mg2-xZnxSnO4 materials offer a promising platform for advanced dynamic information encryption.
• Control over trap states through Zn2+ doping provides a mechanism for tunable information security.
• This research offers reliable guidance for creating next-generation secure data storage solutions.