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Updated: Jun 14, 2026

Synthesis of Cd-free InP/ZnS Quantum Dots Suitable for Biomedical Applications
Published on: February 6, 2016
Transition Layer Assisted Synthesis of Defect Free Amine-Phosphine Based InP QDs
Junfeng Wang1, Guohang Ba1, Jie Meng2
1Institute for Advanced Materials and Technology, University of Science and Technology Beijing, Beijing 100083, China.
Abstract:
Environmentally friendly InP-based quantum dots (QDs) are promising for light-emitting diodes (LEDs) and display applications. So far, the synthesis of highly emitting InP-based QDs via safe and economically viable amine-phosphine remains a challenge. Herein, we report the synthesis of amine-phosphine based InP/ZnSe/ZnS QDs by introducing an alloyed oxidation-free In-ZnSe transition layer (TL) at the core-shell interface. The TL not only has the essential function of preventing oxidation of the core and relieving interfacial strain but also results in oriented epitaxial growth of shell. The alloyed TL significantly mitigates the nonradiative recombination at core-shell interfacial trap states, thereby boosting the photoluminescence (PL) efficiency of the QDs up to 98%. Also, the Auger recombination is suppressed, extending the biexciton lifetime from 60 to 100 ps. The electroluminescence device based on the InP-based QDs shows a high external quantum efficiency over 10%, further demonstrating high quality QDs synthesized by this process.
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