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Updated: May 7, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Yan-Ru Lin1, Yao Li2,3, Steven J Zinkle1,2
1Materials Science and Technology Division, Oak Ridge National Laboratory, Oak Ridge, TN 37831, USA.
Weak-beam dark-field scanning transmission electron microscopy (STEM) offers superior imaging of irradiation-induced dislocation loops in materials. This advanced technique provides clearer, more detailed defect analysis than traditional methods for nuclear applications.
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