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Si-Containing Reverse-Gradient Block Copolymer for Inorganic Pattern Amplification in EUV Lithography.

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Directed self-assembly (DSA) using a novel reverse-gradient block copolymer (BCP) system enhances extreme ultraviolet lithography (EUVL) pattern height. This advanced BCP system achieves high aspect ratio patterns without a neutral layer, overcoming key EUVL challenges.

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Chemical Engineering

Background:

  • Extreme ultraviolet lithography (EUVL) is crucial for sub-10 nm patterning but faces challenges with insufficient photoresist pattern height.
  • Directed self-assembly (DSA) of block copolymers (BCPs) offers potential for nanostructure formation complementary to EUVL.
  • Advanced BCP systems are needed for EUVL, requiring compatibility with inorganic resists and improved resolution, pattern quality, and etch resistance.

Purpose of the Study:

  • To develop an advanced block copolymer (BCP) system for enhancing pattern height in extreme ultraviolet lithography (EUVL).
  • To create a BCP system suitable for inorganic-containing EUV photoresists with improved resolution, pattern quality, and etch resistance.
  • To enable universally vertically oriented lamellae formation without a neutral layer for EUVL pattern enhancement.

Main Methods:

  • Development of a reverse-gradient BCP system: poly[(styrene-gradient-pentafluorostyrene)-b-4-tert-butyldimetilsiloxystyrene] [P(S-g-PFS)-b-P4BDSS].
  • Utilizing the gradient block's compositional transition to create surface energy contrast.
  • Employing the BCP as a pattern height enhancement layer in EUVL processes.

Main Results:

  • The P(S-g-PFS)-b-P4BDSS BCP system achieved universally vertically oriented lamellae without a neutral layer.
  • The Si-containing block provided high etch resistance.
  • A high aspect ratio of 3.29 was achieved when the BCP was used as a pattern height enhancement layer in EUVL.

Conclusions:

  • The developed reverse-gradient BCP system offers a supplementary solution for next-generation EUVL by significantly enhancing pattern height.
  • The BCP's ability to form perpendicular lamellae without a neutral layer and its inherent etch resistance are key advantages.
  • This approach addresses critical challenges in EUVL, paving the way for higher quality nanostructures.