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Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
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Constructing drain surrounded double gate structure in AlGaN/GaN HEMT for boosting breakdown voltage.

Zehui Peng1, Huangbai Liu1, Hao Yu1

  • 1School of Electronic and Computer Engineering, Peking University Shenzhen 518055 China kcchang@pkusz.edu.cn.

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Summary
This summary is machine-generated.

This study introduces a novel drain surrounded double gate (DSDG) AlGaN/GaN high electron mobility transistor (HEMT) to overcome current collapse. The DSDG-HEMT structure significantly enhances breakdown voltage for advanced power electronics.

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Area of Science:

  • Materials Science
  • Semiconductor Physics
  • Electrical Engineering

Background:

  • AlGaN/GaN high electron mobility transistors (HEMTs) are crucial for high-voltage, high-frequency power applications.
  • Current collapse in HEMTs under high voltage impedes their performance and development.

Purpose of the Study:

  • To investigate a drain surrounded double gate (DSDG) AlGaN/GaN HEMT structure for enhanced breakdown performance.
  • To analyze the off-state characteristics and breakdown mechanisms of the proposed DSDG-HEMT.

Main Methods:

  • Utilizing Sentaurus TCAD for device simulation and optimization.
  • Investigating the impact of the dual-gate structure on electron movement and energy bands.
  • Analyzing the suppression of buffer leakage and drain-induced barrier lowering (DIBL) effect.

Main Results:

  • The DSDG structure effectively restrains electron injection from the source, reducing punch-through current.
  • The dual gates alleviate the DIBL effect by manipulating the energy band near the drain.
  • Simulations show a breakdown voltage enhancement of approximately 100 V due to suppressed buffer leakage.

Conclusions:

  • The DSDG AlGaN/GaN HEMT architecture offers a promising solution to enhance breakdown voltage.
  • This design effectively mitigates current collapse, paving the way for more robust power devices.
  • The findings contribute to the advancement of high-performance GaN-based power electronics.