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Updated: May 5, 2026

Comprehensive Characterization of Extended Defects in Semiconductor Materials by a Scanning Electron Microscope
Published on: May 28, 2016
Random sequential adsorption with correlated defects : A series expansion approach
G Palacios1, A M S Macêdo1, Sumanta Kundu2
1Departamento de Física, <a href="https://ror.org/047908t24">Universidade Federal de Pernambuco</a>, 50670-901, Recife, PE, Brazil.
Abstract:
The random sequential adsorption (RSA) problem holds crucial theoretical and practical significance, serving as a pivotal framework for understanding and optimizing particle packing in various scientific and technological applications. Here the problem of the one-dimensional RSA of k-mers onto a substrate with correlated defects controlled by uniform and power-law distributions is theoretically investigated: the coverage fraction is obtained as a function of the density of defects and several scaling laws are examined. The results are compared with extensive Monte Carlo simulations and more traditional methods based on master equations. Emphasis is given in elucidating the scaling behavior of the fluctuations of the coverage fraction. The phenomenon of universality breaking and the issues of conventional Gaussian fluctuations and the Lévy type fluctuations from a simple perspective, relying on the central limit theorem, are also addressed.
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