A Universal, Highly Stable Dopant System for Organic Semiconductors Based on Lewis-Paired Dopant Complexes

Osnat Zapata-Arteaga1, Aleksandr Perevedentsev1,2, Michela Prete1,2

  • 1Institut de Ciència de Materials de Barcelona, ICMAB-CSIC, Campus UAB, 08193 Bellaterra, Spain.

ACS Energy Letters
|July 18, 2024
PubMed
Summary

New Lewis-paired complexes significantly enhance organic semiconductor doping for electronics and energy devices. This breakthrough improves electrical conductivity, thermal stability, and device performance, overcoming limitations of traditional dopants.

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