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Published on: August 2, 2019
High-temperature quantum valley Hall effect with quantized resistance and a topological switch
Ke Huang1, Hailong Fu1, Kenji Watanabe2
1Department of Physics, The Pennsylvania State University, University Park, PA 16802, USA.
Abstract:
Edge states of a topological insulator can be used to explore fundamental science emerging at the interface of low dimensionality and topology. Achieving a robust conductance quantization, however, has proven challenging for helical edge states. In this work, we show wide resistance plateaus in kink states-a manifestation of the quantum valley Hall effect in Bernal bilayer graphene-quantized to the predicted value at zero magnetic field. The plateau resistance has a very weak temperature dependence up to 50 kelvin and is flat within a dc bias window of tens of millivolts. We demonstrate the electrical operation of a topology-controlled switch with an on/off ratio of 200. These results demonstrate the robustness and tunability of the kink states and its promise in constructing electron quantum optics devices.
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