Improving thermal conductivity of Al/SiC composites by post-oxidization of reaction-bonded silicon carbide preforms

High thermal conductivity aluminium-based silicon carbide (Al/SiC) composites were successfully fabricated through post-oxidization of reaction-bonded silicon carbide preforms (RS preforms), utilizing vacuum pressure infiltration technology. The study investigated the regulation of interfacial reactions in conventional sintering and reaction sintering. Conventional sintering introduced a large amount of SiO₂, which negatively impacted the thermal conductivity of the Al/SiC composite, but the reaction sintering not. The proposed post-oxidization treatment of RS preforms effectively removed residual carbon from the SiC particle surfaces, thereby forestalling the formation of Al₄C₃. Furthermore, the post-oxidization treatment effectively formed lightweight SiO₂ deposits onto the surface of SiC particles, improving Al-SiC interfacial wettability and reducing thermal resistance, thereby enhancing composite thermal conductivity. Notably, the thermal conductivity of the post-oxidized sample exhibited an increase of 6.5% compared to the untreated sample. The study also evaluated the impact of particle size distribution on volume fraction and thermal properties. The optimized Al/SiC composites yielded thermal conductivity, coefficient of thermal expansion, bending strength, and Young's modulus values of 237.3 W/m K, 8.5 × 10^-6/°C, 325 MPa, and 75.9 GPa, respectively.