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Electron beam lithography of GeTe through polymorphic phase transformation.

Hu Zhang1,2,3, Meng Li4, Shao-Bo Mi1

  • 1Ji Hua Laboratory, Foshan 528200, China. mi_jhlab@163.com.

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|July 22, 2024
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Two new germanium telluride (GeTe) phases, sphalerite (c-) and hexagonal (h-), were discovered and induced via electron beam irradiation. These findings enable new GeTe quantum device designs.

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Germanium telluride (GeTe) is a key material in phase-change memory devices.
  • Understanding GeTe's polymorphic transformations is crucial for advanced applications.

Purpose of the Study:

  • To report the discovery of two new GeTe phases: sphalerite (c-) and hexagonal (h-).
  • To investigate the polymorphic phase transformation from rhombohedral α-GeTe to c- and h-GeTe.
  • To explore the potential of these phases in designing GeTe-based quantum devices.

Main Methods:

  • Electron beam irradiation to induce polymorphic phase transformation.
  • In situ heating experiments and molecular dynamics simulations for thermodynamics and kinetics.
  • Density-functional theory calculations for electronic property analysis.

Main Results:

  • Successful realization of c-GeTe and h-GeTe phases via electron beam irradiation near room temperature.
  • Detailed illustration of the transformation's thermodynamics and kinetics.
  • c-GeTe identified as metallic; h-GeTe as a narrow-gap semiconductor with strong spin-orbital coupling.

Conclusions:

  • Discovery of novel c-GeTe and h-GeTe phases with distinct properties.
  • Demonstration of electron beam lithography for controlled phase transformation.
  • Potential for developing advanced GeTe-based quantum devices using nanopillars and heterostructures.