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Fabrication of Spatially Confined Complex Oxides
Published on: July 1, 2013
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Layer-Ordered Organooxotin Clusters for Extreme-Ultraviolet Photolithography.
Sihyun Woo1,2, Ji Hye Baek2, Chawon Koh3,4
1Division of Chemical Engineering and Materials Science and Graduate Program in System Health Science and Engineering, Ewha Womans University, Seoul 03760, Republic of Korea.
ACS Applied Materials & Interfaces
|July 22, 2024
Summary
New photoresist materials based on organooxotin clusters offer high sensitivity and stability for extreme-ultraviolet (EUV) lithography. These materials enable fine patterning for advanced semiconductor fabrication.
Area of Science:
- Materials Science
- Nanotechnology
- Semiconductor Manufacturing
Background:
- Extreme-ultraviolet (EUV) photolithography is crucial for creating nanoscale semiconductor patterns.
- Developing advanced photoresist (PR) materials with high sensitivity and shelf-life is essential for EUV lithography.
- The current library of EUV PR materials is limited.
Purpose of the Study:
- To develop novel photoresist materials for EUV lithography.
- To investigate the properties and patterning capabilities of these new materials.
Main Methods:
- Synthesized ladder-structured tetranuclear stannoxanes as EUV PR materials.
- Utilized single-crystal X-ray structure analysis to determine structural properties.
- Evaluated solubility, wettability, film-forming ability, and shelf-life in standard semiconductor processing solvents.
- Performed negative-tone patterning using EUV and electron-beam lithography.
- Assessed compatibility with UV photolithography.
Main Results:
- Developed EUV PRs based on preorganized layers of ladder-structured tetranuclear stannoxanes.
- Achieved a close interlayer distance of 8.5 Å due to butyl chain interdigitation.
- PR materials demonstrated high solubility, excellent wettability, and uniform film formation on Si wafers.
- Exhibited a shelf-life of up to 1 month with resistance to hydrolytic decomposition.
- Enabled negative-tone patterning with critical dimensions of 15 nm (EUV) and 20 nm (e-beam).
- Showed compatibility with UV photolithography due to chromophoric ligands.
Conclusions:
- Layer-ordered organooxotin clusters show significant potential as advanced EUV photoresist materials.
- These materials address key limitations in sensitivity, stability, and processability for next-generation semiconductor fabrication.
