Aerophobic P-MoS2 on MOF-Derived Co,N-Codoped Carbon Nanosheets with Accelerated H2 Bubble Release Dynamics for
Pu Chang1, Tian Wang2, Pengbo Ding1
1School of Materials Science and Engineering, Hebei University of Technology, Tianjin 300132, China.
Abstract:
Rapid bubble release at high current densities results in the detachment of catalysts and performance degradation, posing a persistent challenge in actual alkaline water electrolysis (AWE). Here, hierarchical nanosheet structures (CoNC@P-MoS2) are constructed, with P-doped MoS2 on the surface of Co,N-codoped carbon. It exhibits low hydrogen evolution reaction overpotentials of 30 and 354 mV at 10 and 1000 mA cm-2 in 1 M KOH, respectively, with a small Tafel slope of 36 mV dec-1. The constructed CoNC@P-MoS2||NiFe-DLH cell requires only 1.44 and 1.92 V to achieve overall water splitting at 10 and 1000 mA cm-2, which outperforms the traditional catalysts like Pt/C||IrO2. The introduction of P stabilizes surface hydroxyl (OH*) and increases the proton penetration depth, thereby greatly enhancing its intrinsic activity. It also makes the surface aerophobic by introducing more microfeatures, which greatly improves the geometric activity by increasing the bubble release rate (∼5.8 times). Low energy consumption of 3.92 kW h Nm-3 was achieved with an energy efficiency close to 80%. Bubble growth kinetics analysis reveals that the time and growth factors for CoNC@P-MoS2 are increased to 0.54 and 11.79 from 0.45 and 6.09 for CoNC, respectively, which highlights its fast bubble reaction dynamics. The results suggest the feasibility of CoNC@P-MoS2 as a potential high-performance catalyst in commercial AWE.
More Related Videos
08:12Surface Functionalization of Metal-Organic Frameworks for Improved Moisture Resistance
Published on: September 5, 2018
08:40Synthesis of Metal Nanoparticles Supported on Carbon Nanotube with Doped Co and N Atoms and its Catalytic Applications in Hydrogen Production
Published on: December 6, 2021
Related Concept Videos
MOSFET
In an n-MOSFET, the structure includes n-type source and drain...
MOS Capacitor
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...
MOSFET: Enhancement Mode
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no current...
MOSFET: Depletion Mode
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity arises...
