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Updated: Jun 18, 2025

In Situ Transmission Electron Microscopy with Biasing and Fabrication of Asymmetric Crossbars Based on Mixed-Phased a-VOx
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Positive Bias Temperature Instability in SiC-Based Power MOSFETs

Vladislav Volosov1, Santina Bevilacqua2, Laura Anoldo2

  • 1Advanced Research Center on Electronic System, Department of Electrical, Electronic and Information Engineering, University of Bologna, 47522 Cesena, Italy.

Micromachines
|July 27, 2024
PubMed

Keywords:
VTH characterizationdefectsreliabilitysilicon carbide MOSFETsthreshold voltage instabilitytrapping/de-trapping mechanisms

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