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A Novel 4H-SiC SGT MOSFET with Improved P+ Shielding Region and Integrated Schottky Barrier Diode

Xiaobo Cao1, Jing Liu2, Yingnan An2

  • 1Department of Electrical Engineering, Xi'an University of Technology, Xi'an 710048, China.

Micromachines
|July 27, 2024
PubMed

Keywords:
P+ shielding region (PSR)SiC SGT MOSFETbreakdown voltageon-resistancereverse recovery

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