Solution-Processed Pb(Zr,Ti)O₃ Thin Films with Strong Remnant Pockels Coefficient

Area of Science:

• Materials Science
• Condensed Matter Physics
• Optoelectronics

Background:

• While electrical properties of Pb(Zr,Ti)O3 thin films are well-researched for applications like capacitors and memory devices, their electro-optic (EO) properties remain underexplored.
• This knowledge gap limits the integration of Pb(Zr,Ti)O3 films into EO applications, particularly in silicon photonics for phase modulators.

Purpose of the Study:

• To investigate and characterize the electro-optic (EO) properties of Pb(Zr,Ti)O3 thin films.
• To explore a promising solution processing method for fabricating these films with controlled microstructure and texture.
• To assess the potential of these films for EO applications, especially in heterogeneously integrated silicon photonics.

Main Methods:

• Solution processing of Pb(Zr,Ti)O3 thin films utilizing a La2O2CO3 template.
• Characterization of precursor ink, film microstructure, and texture.
• Measurement of electro-optic properties, including the Pockels coefficient (reff).
• Integration and testing of the film in a ring resonator-based modulator to determine VπL.

Main Results:

• The solution-processed Pb(Zr,Ti)O3 film exhibited a fiber texture.
• A large maximum Pockels coefficient (reff) of 69 pm V-1 and remnant Pockels coefficient of 66 pm V-1 were measured.
• The film demonstrated a low VπL of 2.019 V cm when integrated into a ring resonator modulator.

Conclusions:

• The investigated solution process yields Pb(Zr,Ti)O3 thin films with significant electro-optic properties.
• These findings highlight the potential of solution-processed Pb(Zr,Ti)O3 films for advanced EO applications.
• The demonstrated performance is promising for the integration of these materials into silicon photonics platforms.