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Constructing Slip Stacking Diversity in Van der Waals Homobilayers.

Yun Chen1,2,3, Jinguo Lin4, Junjie Jiang2,5

  • 1School of Advanced Materials, Peking University Shenzhen Graduate School, Shenzhen, Guangdong, 518055, China.

Advanced Materials (Deerfield Beach, Fla.)
|July 31, 2024
PubMed
Summary

Researchers explored van der Waals (vdW) slip stacking in transition metal dichalcogenides (TMDs). They achieved diverse, stable slip stackings in rhenium disulfide and selenide, offering new ways to control material properties.

Keywords:
interlayer stacking engineeringlow symmetry 2D materialsslip stacking

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Area of Science:

  • Materials Science
  • Condensed Matter Physics
  • Nanotechnology

Background:

  • Van der Waals (vdW) interfaces offer tunable interlayer structures via twist and slip.
  • Constructing diverse, high-quality slip stackings is challenging due to structural discrepancies and limited understanding.

Purpose of the Study:

  • To elucidate the creation of multifarious thermodynamically advantageous slip stackings in vdW materials.
  • To experimentally achieve and characterize novel slip stackings in transition metal dichalcogenide (TMD) homobilayers.
  • To develop strategies for modulating and expanding the library of vdW slip stackings.

Main Methods:

  • Theoretical elucidation using transition metal dichalcogenide (TMD) homobilayers as a model system.
  • Experimental direct growth of slip stackings in 1T″-ReS₂ and 1T″-ReSe₂ bilayers.
  • Characterization using atomic-resolution scanning transmission electron microscopy (STEM), angle-resolved polarization Raman spectroscopy, and second harmonic generation (SHG).
  • Modulation via grain boundaries (GBs) and in situ thermal treatment.
  • Density functional theory (DFT) calculations.

Main Results:

  • Demonstrated that vdW materials with low lattice symmetry and weak interlayer coupling facilitate diverse, stable slip stackings.
  • Achieved 13 and 9 distinct slip stackings in 1T″-ReS₂ and 1T″-ReSe₂ bilayers, respectively.
  • Revealed stacking configurations using advanced microscopy and spectroscopy.
  • Developed strategies for stacking modulation and expansion.
  • DFT calculations show stacking-dependent electronic band structure transitions under pressure.

Conclusions:

  • Unveiled a unique vdW epitaxy for creating diverse slip stackings.
  • Provided viable means for manipulating interlayer atomic registries.
  • Highlighted the potential for tuning material properties through controlled slip stacking.