Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Diode: Reverse bias01:14

Diode: Reverse bias

659
A diode is reverse-biased when the positive terminal of an external voltage source is connected to the n-type material and the negative terminal to the p-type material. This configuration opposes the natural direction of current flow through the diode, effectively increasing the width of the depletion region and the barrier potential. The reverse bias condition produces a minimal leakage current, primarily due to minority charge carriers. This leakage becomes significant when the reverse...
659
Modeling of Diode Reverse Characteristics01:14

Modeling of Diode Reverse Characteristics

252
In electronic circuits, reverse-biased diode configurations are critical for regulating voltage levels. Zener diodes exploit the reverse breakdown phenomenon and exhibit a controlled breakdown at a specific Zener voltage (VZ). They are designed to maintain a constant voltage across their terminals and are commonly used for voltage regulation in circuits.
When a reverse voltage applied to a Zener diode exceeds its breakdown voltage, the diode enters the breakdown region. At this point, the...
252
Schottky Barrier Diode01:27

Schottky Barrier Diode

327
Schottky barrier diodes are specialized semiconductor devices characterized by their unique construction. This construction involves combining a metal layer with a moderately doped n-type semiconductor material. This combination leads to the formation of a Schottky barrier, a pivotal element that defines the diode's operational characteristics. The core functionality of Schottky barrier diodes is their capacity to allow current to flow in only one direction due to their distinctive...
327
Superconductor01:24

Superconductor

1.1K
A substance that reaches superconductivity, a state in which magnetic fields cannot penetrate, and there is no electrical resistance, is referred to as a superconductor. In 1911, Heike Kamerlingh Onnes of Leiden University, a Dutch physicist, observed a relation between the temperature and the resistance of the element mercury. The mercury sample was then cooled in liquid helium to study the linear dependence of resistance on temperature. It was observed that, as the temperature decreased, the...
1.1K
Non-ohmic Devices00:51

Non-ohmic Devices

1.1K
In most substances, the current flow is proportional to the voltage applied to it. A simple relationship between the values of current, voltage, and resistance is known as Ohm's law. Nonohmic devices do not exhibit a linear relationship between voltage and current. One such device is the semiconducting circuit element known as a diode. A diode is a circuit device that allows current flow in only one direction.
Consider a simple circuit consisting of a battery, a diode, and a resistor. A...
1.1K
Diode: Forward bias01:20

Diode: Forward bias

968
In semiconductor devices, diodes play a crucial role in directing current flow, and its operation is primarily categorized into forward bias and reverse bias. A diode is said to be forward-biased when its p-type region is connected to the positive terminal of a battery and its n-type region is linked to the negative terminal. This configuration reduces the potential barrier within the diode, allowing current to flow easily from the p to the n-type region.
The behavior of a diode in forward bias...
968

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Enhanced Coercivity in Spin-Orbit-Proximitized Cr<sub>3</sub>Te<sub>4</sub> Ultrathin Films.

Nano letters·2026
Same author

Record-high Glass coefficient in the shift current response of a ferroelectric halide perovskite.

Proceedings of the National Academy of Sciences of the United States of America·2026
Same author

Predicting survival in oral squamous cell carcinoma via integrated analysis of tumor budding and tertiary lymphoid structures.

Frontiers in oncology·2026
Same author

NF1 loss in estrogen receptor-positive breast cancer induces osteoclast formation and immunosuppression to promote bone metastasis.

Cancer letters·2026
Same author

A comparison between CARLIN and DNA Typewriter in CRISPR-mediated lineage tracing.

BMC bioinformatics·2026
Same author

ICAM1high Neutrophils Sculpt Tumor Evolution and Metastasis through Symbiotic Adhesion and Reverse Migration.

Cancer research·2026

Related Experiment Video

Updated: Jun 18, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.6K

Superconducting diode effect under time-reversal symmetry.

Fengshuo Liu1,2, Yuki M Itahashi1, Shunta Aoki1

  • 1Quantum-Phase Electronics Center (QPEC) and Department of Applied Physics, The University of Tokyo, Tokyo 113-8656, Japan.

Science Advances
|July 31, 2024
PubMed
Summary

Strain engineering enables a superconducting diode effect (SDE) in PbTaSe2, demonstrating its intrinsic nature even without broken time-reversal symmetry. This highlights the crucial role of strain-induced polarization in SDE phenomena.

More Related Videos

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

9.6K
Comparison of Two Different Synthesis Methods of Single Crystals of Superconducting Uranium Ditelluride
04:51

Comparison of Two Different Synthesis Methods of Single Crystals of Superconducting Uranium Ditelluride

Published on: July 8, 2021

2.7K

Related Experiment Videos

Last Updated: Jun 18, 2025

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform
05:39

Scalable Quantum Integrated Circuits on Superconducting Two-Dimensional Electron Gas Platform

Published on: August 2, 2019

9.6K
All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics
11:33

All-electronic Nanosecond-resolved Scanning Tunneling Microscopy: Facilitating the Investigation of Single Dopant Charge Dynamics

Published on: January 19, 2018

9.6K
Comparison of Two Different Synthesis Methods of Single Crystals of Superconducting Uranium Ditelluride
04:51

Comparison of Two Different Synthesis Methods of Single Crystals of Superconducting Uranium Ditelluride

Published on: July 8, 2021

2.7K

Area of Science:

  • Condensed Matter Physics
  • Materials Science

Background:

  • Superconducting diode effect (SDE) allows interchanging superconducting and normal conduction based on current direction.
  • SDE is observed in noncentrosymmetric superconductors, with broken inversion and time-reversal symmetry previously thought essential.
  • The intrinsic role of these symmetries in SDE remains unclear.

Purpose of the Study:

  • To investigate the role of strain in realizing the superconducting diode effect (SDE).
  • To explore SDE in a layered trigonal superconductor, PbTaSe2.
  • To elucidate the fundamental requirements for SDE, particularly concerning symmetry breaking.

Main Methods:

  • Fabrication of strained and unstrained PbTaSe2 devices.
  • Electrical transport measurements to detect the superconducting diode effect.
  • Application of controlled strain along specific crystallographic directions (armchair and zigzag).

Main Results:

  • The superconducting diode effect (SDE) was observed exclusively in strained PbTaSe2 devices.
  • SDE was absent in unstrained devices, despite the trigonal structure allowing for it.
  • Strain-dependent SDE was observed, with zero-field or magnetic field-even/odd effects correlating with strain and current direction.

Conclusions:

  • Strain-induced electric polarization plays a critical role in realizing the intrinsic superconducting diode effect.
  • SDE can exist even under time-reversal symmetry, challenging previous assumptions.
  • This work provides new insights into the fundamental mechanisms governing SDE in superconductors.