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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities

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An Ultrafast Multibit Memory Based on the ReS₂/h-BN/Graphene Heterostructure.

Haoyue Lu¹, Yan Wang¹, Xuchen Han¹

¹State Key Laboratory of Precision Measurement Technology and Instrument, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin 300072, China.

|August 1, 2024

Summary

Researchers developed a novel floating-gate memory device using a ReS2/h-BN/graphene heterostructure. This advanced memory offers ultrafast, multilevel nonvolatile storage with a large memory window and high endurance, significantly boosting data storage capabilities.

Keywords:

ReS2 flash memory multilevel memory states ultrafast operation speed van der Waals heterostructure

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Area of Science:

Materials Science
Nanotechnology
Solid-State Electronics

Background:

The exponential growth of data necessitates advancements in data storage density and calculation speed.
Developing multibit memory with ultrafast operational speeds is crucial for meeting big data demands.

Purpose of the Study:

To report a novel floating-gate (FG) memory device based on a ReS2/h-BN/graphene van der Waals heterostructure.
To investigate the device's nonvolatile memory characteristics, including operational speed, memory window, endurance, and retention.
To explore the electrically and optically tunable multilevel memory behavior.

Main Methods:

Fabrication of a floating-gate memory device utilizing a ReS2/h-BN/graphene van der Waals heterostructure.
Characterization of memory performance, including memory window, erasing/programming current ratio, operational speed, endurance, and retention.
Investigation of electrical and optical tuning of multilevel nonvolatile memory states.

Main Results:

The device demonstrated ultrafast (30 ns) and multilevel nonvolatile memory characteristics.
Achieved a large memory window (113.36 V) and a high erasing/programming current ratio (10^7).
Exhibited excellent endurance (>1000 cycles) and retention (>1100 s).
Demonstrated electrically tunable memory states of 130 levels (>7 bits) and optically tunable states of 45 levels (>5 bits).

Conclusions:

The ReS2/h-BN/graphene heterostructure is a promising material for advanced floating-gate memory devices.
The developed device offers significant improvements in speed, storage capacity, and tunability for nonvolatile memory applications.
This work contributes to the development of high-performance memory solutions for the big data era.