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Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
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An Ultrafast Multibit Memory Based on the ReS2/h-BN/Graphene Heterostructure

Haoyue Lu1, Yan Wang1, Xuchen Han1

  • 1State Key Laboratory of Precision Measurement Technology and Instrument, School of Precision Instruments and Optoelectronics Engineering, Tianjin University, No. 92 Weijin Road, Tianjin 300072, China.

ACS Nano
|August 1, 2024
PubMed

Keywords:
ReS2flash memorymultilevel memory statesultrafast operation speedvan der Waals heterostructure

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