High-Yield Production of High-κ/Metal Gate Nanopattern Array for 2D Devices via Oxidation-Assisted Etching Approach

2D materials with atomically thin nature are promising to develop scaled transistors and enable the extreme miniaturization of electronic components. However, batch manufacturing of top-gate 2D transistors remains a challenge since gate dielectrics or gate electrodes transferred from 2D material easily peel away as gate pitch decreases to the nanometer scale during lift-off processes. In this study, an oxidation-assisted etching technique is developed for batch manufacturing of nanopatterned high-κ/metal gate (HKMG) stacks on 2D materials. This strategy produces nano-pitch self-oxidized Al₂O₃/Al patterns with a resolution of 150 nm on 2D channel material, including graphene, MoS₂, and WS₂ without introducing any additional damage. Through a gate-first technology in which the Al₂O₃/Al gate stacks are used as a mask for the formation of source and drain, a short-channel HKMG MoS₂ transistor with a nearly ideal subthreshold swing (SS) of 61 mV dec^-1, and HKMG graphene transistor with a cut-off frequency of 150 GHz are achieved. Moreover, both graphene and MoS₂ HKMG transistor arrays exhibit high uniformity. The study may bring the potential for the massive production of large-scale integrated circuits using 2D materials.