Compositional engineering of interfacial charge transfer in van der Waals heterostructures of graphene and transition...

Owing to their unique optical and electronic properties, vertical van der Waals heterostructures (vdWHs) have attracted considerable attention in optoelectronic applications, such as photodetection, light harvesting, and light-emitting diodes. To fully harness these properties, it is crucial to understand the interfacial charge transfer (CT) and recombination dynamics across vdWHs. However, the effects of interfacial energetics and defect states on interfacial CT and recombination processes in graphene-transition metal dichalcogenide (Gr-TMD) vdWHs remain debated. Here, we investigate the interfacial CT dynamics in Gr-TMD vdWHs with different chemical compositions (W, Mo, S, and Se) and tunable interfacial energetics. We demonstrate, using ultrafast terahertz spectroscopy, that while the photo-induced electron transfer direction is universal with graphene donating electrons to TMDs, its efficiency is chalcogen-dependent: the CT efficiency of S atom-based vdWHs is 3-5 times higher than that of Se-based vdWHs thanks to the lower Schottky barrier present in S-based vdWHs. In contrast, the electron back transfer process from TMD to Gr, which defines the charge separation time, is transition metal-dependent and dominated by the mid-gap defect level of TMDs: W transition metal-based vdWHs possess extremely long charge separation, well beyond 1 ns, which is significantly longer than Mo-based vdWHs with only 10 s of ps charge separation. This difference can be traced to the much deeper mid-gap defect reported in W-based TMDs compared to Mo-based ones, resulting in modified energetics for the back electron transfer from the trapped states to graphene. Our results shed light on the role of interfacial energetics and defects by tailoring chemical compositions of TMDs on the interfacial CT and recombination dynamics in Gr-TMD vdWHs, which is pivotal for optimizing optoelectronic devices, particularly in the field of photodetection.