n-Type Doping Effect of Anthracene-Based Cationic Dyes in Organic Electronics.

Area of Science:

• Materials Science
• Organic Electronics
• Semiconductor Physics

Background:

• Improving electrical characteristics and air stability of n-type organic semiconductors (OSCs) is crucial for advanced electronics.
• Effective n-type doping is essential for enhancing OSC performance and longevity.

Purpose of the Study:

• To report a selection method for effective n-type dopants for OSCs.
• To investigate anthracene cationic dyes with high miscibility for optimized doping structures and thicknesses.

Main Methods:

• Developed a selection strategy for n-type dopants based on anthracene cationic dyes.
• Utilized atomic force microscopy (AFM) to evaluate OSC density, roughness, and phase deviation.
• Compared surface, bulk, and contact doping methods for rhodamine B (RhoB)-doped OSCs.

Main Results:

• Rhodamine B (RhoB)-doped OSC exhibited superior density, minimal roughness (2.69 nm), low phase deviation (0.85°), and highest electron mobility (μ).
• Surface doping with RhoB achieved the lowest contact resistance (2.01 × 10⁵ Ω cm).
• RhoB-doped OSC retained 81.63% of its initial mobility after 15 days, significantly outperforming pristine OSC (4.41% retention).

Conclusions:

• The developed methodology effectively selects high-performance n-type dopants for OSCs.
• RhoB is identified as a promising dopant for enhancing both performance and air stability of n-type OSCs.
• This work contributes to the development of high-performance, air-stable n-type organic electronic devices.