Related Experiment Video
Updated: Jun 17, 2025

Fabrication of Gate-tunable Graphene Devices for Scanning Tunneling Microscopy Studies with Coulomb Impurities
Published on: July 24, 2015
Ultimate Charge Transport Regimes in Doping-Controlled Graphene Laminates: Phonon-Assisted Processes Revealed by the
Mohsen Moazzami Gudarzi1, Sergey Slizovskiy1, Boyang Mao1,2
1Department of Physics and Astronomy, The University of Manchester, Oxford Road, Manchester M13 9PL, U.K.
Abstract:
Understanding and controlling the electrical properties of solution-processed 2D materials is key to further printed electronics progress. Here, we demonstrate that the thermolysis of the aromatic intercalants utilized in nanosheet exfoliation for graphene laminates allows for high intrinsic mobility and the simultaneous control of doping type (n- and p-) and concentration over a wide range. We establish that the intraflake mobility is high by observing a linear magnetoresistance of such solution-processed graphene laminates and using it to devolve the interflake tunneling and intralayer magnetotransport. Consequently, we determine the temperature dependencies of the inter- and intralayer characteristics. The intraflake transport appears to be dominated by electron-phonon scattering processes at temperatures T > 20 K, while the interflake transport is governed by phonon-assisted tunneling. In particular, we identify the efficiency of phonon-assisted tunneling as the main limiting factor for electrical conductivity in graphene laminates at room temperature. We also demonstrate a thermoelectric sensitivity of around 50 μV·K-1 in a solution-processed metal-free graphene-based thermocouple.
Related Concept Videos
Carrier Transport
Drift Current:
The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
Carrier Generation and Recombination
This process is given by the generation rate G and is efficient due to the conservation of momentum between the valence band maximum and conduction band minimum.
Indirect generation involves an...
Characteristics of MOSFET
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
MOSFET: Depletion Mode
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
P-N junction

