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A Study on Dual-Gate Dielectric Face Tunnel Field-Effect Transistor for Ternary Inverter

Aoxuan Wang1, Hongliang Lu1, Yuming Zhang1

  • 1Key Laboratory for Wide Band Gap Semiconductor Materials and Devices of Education Ministry, School of Microelectronics, Xidian University, Xi'an 710071, China.

Nanomaterials (Basel, Switzerland)
|August 9, 2024
PubMed

Keywords:
multiple subthreshold voltage (multi-VTH)static noise margins (SNMs)ternary invertertunnel field-effect transistor (TFET)

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