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Related Concept Videos

Carrier Generation and Recombination01:22

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Carrier generation is the process by which electron-hole pairs (EHPs) are created within the semiconductor. In direct-bandgap semiconductors, such as gallium arsenide (GaAs), this occurs efficiently when energy absorption prompts valence electrons to leap into the conduction band, leaving behind holes.
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Indirect generation involves an...
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Intrinsic semiconductors are highly pure materials with no impurities. At absolute zero, these semiconductors behave as perfect insulators because all the valence electrons are bound, and the conduction band is empty, disallowing electrical conduction. The Fermi level is a concept used to describe the probability of occupancy of energy levels by electrons at thermal equilibrium. In intrinsic semiconductors, the Fermi level is positioned at the midpoint of the energy gap at absolute zero. When...
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Updated: Jun 17, 2025

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Carbon and Silicon Impurity Defects in GaN: Simulating Single-Photon Emitters by First Principles.

Junxiao Yuan1,2, Jinglei Du1, Yidong Hou1

  • 1Department of Physics, Sichuan University, Chengdu 610065, China.

Materials (Basel, Switzerland)
|August 10, 2024
PubMed
Summary
This summary is machine-generated.

Gallium nitride (GaN) defect single-photon emitters show promise for high-speed communication. Carbon doping creates a NGaVNCN defect, a fast single-photon source operating at 864 nm.

Keywords:
atom defectfirst-principle calculationsimpuritysingle-photon emitterstelecommunication band

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Area of Science:

  • Materials Science
  • Quantum Optics
  • Solid-State Physics

Background:

  • Defect single-photon emitters (SPE) in gallium nitride (GaN) are attractive for room-temperature operation, narrow linewidths, and high brightness.
  • The exact mechanisms behind SPE in GaN are not fully understood due to numerous potential intrinsic defects.

Purpose of the Study:

  • To systematically investigate defect interactions with common dopants (carbon, silicon) in GaN.
  • To identify novel, high-speed defect single-photon sources.
  • To elucidate the properties of specific ternary defects for photonic applications.

Main Methods:

  • Ab initio calculations were performed to study defect formation and properties.
  • Density Functional Theory (DFT) using Perdew-Burke-Ernzerhof (PBE) and Heyd-Scuseria-Ernzerhof (HSE) functionals.
  • Analysis of defect energy levels, emission wavelengths, and lifetimes.

Main Results:

  • A ternary defect, NGaVNCN, was identified as a promising high-speed single-photon source.
  • This carbon-related defect exhibits a lifetime < 1 ns and a zero-photon line (ZPL) at 864 nm.
  • A silicon-related defect, NGaVNSiN, was found unsuitable due to its energy level within the conduction band.

Conclusions:

  • Carbon doping of GaN can create efficient, high-speed single-photon emitters suitable for fiber communication.
  • Ternary defects involving intrinsic vacancies and dopants are key to developing advanced photonic devices.
  • Further investigation into defect engineering in GaN holds potential for high-performance single-photon sources.