Highly stable two-dimensional Ruddlesden-Popper perovskite-based resistive switching memory devices

Area of Science:

• Materials Science
• Solid-State Electronics
• Nanotechnology

Background:

• Organic-inorganic halide perovskites (OIHPs) are emerging materials for resistive switching random-access memory (ReRAM) devices.
• Two-dimensional (2D) OIHPs offer unique structural diversity and enhanced stability, making them promising for ReRAM applications.

Purpose of the Study:

• To investigate the resistive switching (RS) characteristics of ReRAM devices fabricated using pure 2D Ruddlesden-Popper (RP) perovskite crystals.
• To evaluate the stability and performance of these 2D perovskite-based memory devices.

Main Methods:

• Fabrication of ReRAM devices using (TEA)2PbBr4 and (TEA)2PbI4, which are pure 2D RP perovskite crystals.
• Characterization of RS properties including bipolar switching, ON/OFF ratio, data retention, and endurance.
• Investigation of temperature-dependent RS behaviors and stability under ambient conditions.

Main Results:

• The fabricated RS memory devices exhibit reliable and reproducible bipolar switching.
• Achieved a high ON/OFF ratio of approximately 10^4, data retention over 10^4 seconds, and endurance of 200 cycles.
• Demonstrated retention of RS properties for over 45 days at ambient conditions with 47% ± 4% relative humidity.

Conclusions:

• 2D RP perovskite crystals are suitable for stable and high-performance ReRAM devices.
• The study elucidates the mechanism of conducting pathway formation and annihilation under electric fields.
• Findings support the potential for 2D perovskite-based RS memory devices in logic applications.