Jove
Visualize
Contact Us
JoVE
x logofacebook logolinkedin logoyoutube logo
ABOUT JoVE
OverviewLeadershipBlogJoVE Help Center
AUTHORS
Publishing ProcessEditorial BoardScope & PoliciesPeer ReviewFAQSubmit
LIBRARIANS
TestimonialsSubscriptionsAccessResourcesLibrary Advisory BoardFAQ
RESEARCH
JoVE JournalMethods CollectionsJoVE Encyclopedia of ExperimentsArchive
EDUCATION
JoVE CoreJoVE BusinessJoVE Science EducationJoVE Lab ManualFaculty Resource CenterFaculty Site
Terms & Conditions of Use
Privacy Policy
Policies

Related Concept Videos

Biasing of Metal-Semiconductor Junctions01:27

Biasing of Metal-Semiconductor Junctions

232
Biasing metal-semiconductor junctions involves applying a voltage across the junction. Specifically, the metal is connected to a voltage source, while the semiconductor is grounded. This technique is essential for controlling the direction and magnitude of current flow in electronic devices, including diodes, transistors, and photovoltaic cells.
In Schottky junctions, where the semiconductor is n-type, applying a positive voltage to the metal relative to the semiconductor reduces its Fermi...
232
Spin–Spin Coupling: One-Bond Coupling01:17

Spin–Spin Coupling: One-Bond Coupling

950
Coupling interactions are strongest between NMR-active nuclei bonded to each other, where spin information can be transmitted directly through the pair of bonding electrons. While nuclei polarize their electrons to the opposite spins, the bonding electron pair has opposite spins. Configurations with antiparallel nuclear spins are expected to be lower in energy. When coupling makes antiparallel states more favorable, J is considered to have a positive value. The one-bond coupling constant, 1J,...
950
MOSFET: Enhancement Mode01:22

MOSFET: Enhancement Mode

303
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
303
Valence Bond Theory02:42

Valence Bond Theory

8.5K
Coordination compounds and complexes exhibit different colors, geometries, and magnetic behavior, depending on the metal atom/ion and ligands from which they are composed. In an attempt to explain the bonding and structure of coordination complexes, Linus Pauling proposed the valence bond theory, or VBT, using the concepts of hybridization and the overlapping of the atomic orbitals. According to VBT, the central metal atom or ion (Lewis acid) hybridizes to provide empty orbitals of suitable...
8.5K
Biasing of FET01:22

Biasing of FET

239
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
239
Spin–Spin Coupling: Two-Bond Coupling (Geminal Coupling)01:20

Spin–Spin Coupling: Two-Bond Coupling (Geminal Coupling)

985
Two NMR-active nuclei bonded to a central atom can be involved in geminal or two-bond coupling. Geminal coupling is commonly seen between diastereotopic protons in chiral molecules and unsymmetrical alkenes, among others.
The central atom need not be NMR-active because its electrons are affected by the electron polarization of the spin-active atoms. However, spin information is transmitted less effectively than in one-bond coupling, and 2J values are usually weaker than 1J values. The energy of...
985

You might also read

Related Articles

Articles linked to this work by shared authors, journal, and citation graph.

Sort by
Same author

Reconstruction of magnon eigenfunctions by X-ray magnetic vector chronoscopy.

Nature nanotechnology·2026
Same author

All-Electric Low-Power Switching of Perpendicular Magnetization by Low-Crystal-Symmetry Weyl Semimetal NbIrTe<sub>4</sub>.

ACS nano·2026
Same author

Noninvasive diffuse optical monitoring of cerebral blood flow and oxygenation responses to intermittent hypoxia in neonatal rats.

Journal of biomedical optics·2026
Same author

AQuA2-Cloud: a web platform for fluorescence bioimaging activity analysis.

bioRxiv : the preprint server for biology·2026
Same author

[Retracted] miR‑24‑3p regulates bladder cancer cell proliferation, migration, invasion and autophagy by targeting DEDD.

Oncology reports·2026
Same author

Conservation of Neuron-Astrocyte Correlated Activity in Developing Sensory Pathways.

Glia·2026
Same journal

Integrated Electrode-to-Device Design via Combination of Grain Boundary Reconstruction and Dynamic Gas Management Toward Stable 3 Ah Aqueous Zinc-Iodine Pouch Cells.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

Diblock Copolymer Engineered Swim Bladder Membrane Enables Spatiotemporal Synchronized Defense and Pro-Healing in Challenging Soft Tissue Regeneration.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

Solvation Chemistry Reimagined: LiPF6-Enabled Suppression of Gas Evolution for Ultra-Stable 200 Ah Anode-Free Lithium-Metal Batteries.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

Entropy-Driven Conformational Disorder Enables Outstanding High-Temperature Energy Storage in Dielectric Polymers.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

Breaking Thermal Conductivity-Electrical Resistivity Trade-Off in Liquid Metal-Based Thermal Interface Materials via Interface Engineering.

Advanced materials (Deerfield Beach, Fla.)·2026
Same journal

Screen-Printed Few-Layer Graphene Platforms for Monitoring Switchable Spin-Crossover Phenomena at Room-Temperature.

Advanced materials (Deerfield Beach, Fla.)·2026
See all related articles

Related Experiment Video

Updated: Jun 17, 2025

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
09:06

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope

Published on: March 24, 2019

8.1K

Robust Field-Free Switching Using Large Unconventional Spin-Orbit Torque in an All-Van der Waals Heterostructure.

Yiyang Zhang1, Xiaolin Ren1, Ruizi Liu2

  • 1Department of Physics, The Hong Kong University of Science and Technology, Kowloon, Hong Kong SAR, 999077, China.

Advanced Materials (Deerfield Beach, Fla.)
|August 14, 2024
PubMed
Summary
This summary is machine-generated.

This study demonstrates field-free switching in a van der Waals heterostructure using unconventional spin-orbit torque (SOT). This breakthrough offers robust magnetization control for future spintronic devices.

Keywords:
2D magnetWeyl semimetalcurrent‐induced magnetization switchingspin‐orbit torquevan der Waal material

More Related Videos

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.5K
Fabricating van der Waals Heterostructures with Precise Rotational Alignment
09:25

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

9.5K

Related Experiment Videos

Last Updated: Jun 17, 2025

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
09:06

Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope

Published on: March 24, 2019

8.1K
Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating
10:36

Electric-field Control of Electronic States in WS2 Nanodevices by Electrolyte Gating

Published on: April 12, 2018

11.5K
Fabricating van der Waals Heterostructures with Precise Rotational Alignment
09:25

Fabricating van der Waals Heterostructures with Precise Rotational Alignment

Published on: July 5, 2019

9.5K

Area of Science:

  • Condensed Matter Physics
  • Materials Science
  • Spintronics

Background:

  • All-van der Waals (vdW) magnetic heterostructures offer electric field control of magnetization.
  • Unconventional spin-orbit torque (SOT) using out-of-plane polarized spin currents is key for efficient magnetization switching.
  • Challenges include achieving large unconventional SOT and ensuring field-free switching robustness in vdW heterostructures.

Purpose of the Study:

  • To demonstrate field-free magnetization switching in an all-vdW heterostructure.
  • To investigate the unconventional SOT efficiency and robustness against external magnetic fields.
  • To explore the potential of vdW heterostructures for advanced SOT-based devices.

Main Methods:

  • Fabrication of an all-vdW heterostructure combining TaIrTe 4 (type-II Weyl semimetal) and Fe 3 GaTe 2 (ferromagnet).
  • Experimental measurement of magnetization switching under electrical current.
  • Numerical simulations to understand SOT mechanisms and switching behavior.

Main Results:

  • Achieved fully field-free magnetization switching at a current density of 2.56 × 10 10 A m -2 at 300 K.
  • Determined a large SOT effective field efficiency of 0.37 for the out-of-plane polarized spin current.
  • Demonstrated robust switching, with polarity maintained up to an external in-plane magnetic field of 252 mT.

Conclusions:

  • The studied all-vdW heterostructure exhibits large unconventional SOT, enabling efficient and robust field-free switching.
  • These findings highlight the potential of all-vdW heterostructures for developing highly efficient and stable SOT devices.
  • The research paves the way for next-generation spintronic applications beyond traditional devices.