High-performance electrolyte-gated amorphous InGaZnO field-effect transistor for label-free DNA sensing

Hong Liu1, Junxin Chen1, Jin Hu1

  • 1Guangdong Provincial Key Laboratory of New Energy Materials Service Safety, Shenzhen Key Laboratory of Special Functional Materials, College of Materials Science and Engineering, Shenzhen University, Shenzhen 518060, China.

Summary

This study presents a novel electrolyte-gated Indium Gallium Zinc Oxide field-effect transistor (IGZO FET) biosensor for highly sensitive and label-free biomolecule detection. The developed DNA biosensor demonstrates a low detection limit and high selectivity, offering a cost-effective solution.

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