Related Experiment Video
Updated: Jun 17, 2025
09:06
Visualizing Uniaxial-strain Manipulation of Antiferromagnetic Domains in Fe1+YTe Using a Spin-polarized Scanning Tunneling Microscope
Published on: March 24, 2019
8.1K
Weak antilocalization in the topological semimetal candidate YbAuSb
D Ram1, S Banerjee2, A Sundaresan2
1Department of Physics, Indian Institute of Technology, Kanpur 208016, India.
Summary
This study investigates YbAuSb single crystals, revealing metallic behavior and weak antilocalization (WAL) effects. Hole charge carriers dominate transport, with WAL explained by established models.
Area of Science:
- Condensed Matter Physics
- Materials Science
- Solid State Physics
Background:
- YbAuSb single crystals were synthesized using the bismuth flux method.
- X-ray diffraction confirmed a LiGaGe-type hexagonal structure (space group P63mc).
Purpose of the Study:
- To investigate the magnetic and magnetotransport properties of YbAuSb.
- To understand the underlying mechanisms of observed magnetoresistance phenomena.
Main Methods:
- Magnetic measurements to determine magnetic properties.
- Electrical resistivity and Hall effect measurements.
- Magnetoresistance measurements at varying fields and temperatures.
Main Results:
- YbAuSb exhibits nonmagnetic behavior with a divalent ytterbium ion.
- Metallic electrical resistivity and a cusp-like magnetoresistance at low fields.
- Weak antilocalization (WAL) effect observed, prominent at low temperatures.
- WAL explained by modified Hikami-Larkin-Nagaoka and Altshuler-Aronov models.
- Dominance of hole charge carriers with density ~10^20 cm^-3 and mobility ~10^2 cm^2 V^-1 s^-1.
Conclusions:
- YbAuSb is a metallic compound with significant weak antilocalization effects.
- The magnetotransport properties are consistent with WAL phenomena and hole-dominated transport.
- The study provides insights into the electronic properties of Yb-based intermetallic compounds.
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