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Field Effect Transistor

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...

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Effect of Bending on the Electrical Characteristics of Flexible Organic Single Crystal-based Field-effect Transistors

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Published on: November 7, 2016

Full Two-Dimensional Ambipolar Field-Effect Transistors for Transparent and Flexible Electronics.

Ziyu Ming¹, Haoran Sun¹, Hu Wang¹

¹School of Microelectronics, Fudan University, Shanghai 200433, China.

ACS Applied Materials & Interfaces

|August 15, 2024

Summary

Researchers developed fully two-dimensional (2D) ambipolar field-effect transistors (FETs) using graphene, WSe2, and h-BN. These flexible, transparent devices show promise for advanced electronics applications.

Keywords:

2D materials ambipolar semiconductor flexible electronics logic circuit transparent electronics

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Area of Science:

Materials Science
Condensed Matter Physics
Nanotechnology

Background:

Two-dimensional (2D) materials offer unique properties for transparent and flexible electronics.
Ambipolar 2D semiconductors are crucial for advanced applications like CMOS-like circuits and neuromorphic sensors.

Purpose of the Study:

To fabricate and characterize fully 2D ambipolar field-effect transistors (FETs).
To explore the potential of these FETs in transparent and flexible electronic applications.

Main Methods:

Fabrication of FETs using graphene (source/drain/gate), WSe2 (channel), and hexagonal boron nitride (h-BN) (dielectric).
Electrical characterization of ambipolar FETs, including on-currents and on/off ratios.
Demonstration of a CMOS-like inverter using two series-connected ambipolar FETs.
Evaluation of optical transmittance and mechanical flexibility on different substrates.

Main Results:

Achieved comparable n-branch and p-branch on-currents with high on/off ratios up to 10^8.
Demonstrated a CMOS-like inverter with a maximum gain of 147, operational in multiple quadrants.
Obtained high optical transmittance (>70%) on glass and excellent flexibility (bending radius <0.5 cm) on PET substrate.

Conclusions:

The fabricated fully 2D ambipolar FETs exhibit excellent electrical performance.
These devices are suitable for transparent and flexible electronics due to their high transmittance and flexibility.
The study advances the application of 2D materials in next-generation electronic devices.