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Related Concept Videos

Field Effect Transistor01:29

Field Effect Transistor

Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...

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Atomically Precise Graphene Nanoribbon Transistors with Long-Term Stability and Reliability.

Christina Dinh1, Muhammed Yusufoglu1, Kentaro Yumigeta1

  • 1Department of Materials Science & Engineering, University of Arizona, Tucson, Arizona 85721, United States.

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|August 15, 2024
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Summary

Atomically precise graphene nanoribbons (GNRs) show performance decline in transistors (GNRFETs). A thin aluminum oxide layer enhances stability, enabling thousands of cycles without degradation.

Keywords:
contact resistancedevice reliabilityfield-effect transistors (FETs)graphene nanoribbons (GNRs)nanoelectronicssemiconductorstwo-dimensional (2D) materials

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Area of Science:

  • Materials Science
  • Nanotechnology
  • Electronics Engineering

Background:

  • Atomically precise graphene nanoribbons (GNRs) are promising for high-performance field-effect transistors (FETs).
  • Previous research demonstrated the feasibility of GNR-based FETs (GNRFETs), focusing on performance enhancement.
  • The long-term stability and reliability of GNRFETs are critical for practical applications but remain largely unexplored.

Purpose of the Study:

  • To investigate the stability and reliability of short-channel GNRFETs under continuous operation.
  • To identify the cause of performance degradation in GNRFETs during transistor switching cycles.
  • To develop a method for improving the operational stability and reliability of GNRFETs.

Main Methods:

  • Fabrication of short-channel field-effect transistors using nine-atom-wide armchair graphene nanoribbons (9-AGNRFETs).
  • Comprehensive electrical characterization of GNRFETs before and after the deposition of a thin aluminum oxide (Al2O3) layer via atomic layer deposition (ALD).
  • Evaluation of device performance, integrity, compatibility, stability, and reliability over multiple transistor on/off cycles.

Main Results:

  • 9-AGNRFETs exhibited significant on-state current (ION) deterioration over consecutive logic cycles, a previously unobserved phenomenon.
  • Performance degradation was attributed to the increasing contact resistance over multiple measurement cycles.
  • The deposition of a ~10 nm Al2O3 layer successfully prevented performance degradation, with devices operating reliably for thousands of continuous cycles.

Conclusions:

  • The stability and reliability of GNRFETs are significantly impacted by contact resistance degradation during operation.
  • Atomic layer deposition of Al2O3 is an effective strategy to enhance the operational stability and reliability of GNRFETs.
  • This study provides crucial insights for the large-scale integration of GNR transistors into practical electronic devices.