Tensor-Train Format Hierarchical Equations of Motion Formalism: Charge Transfer in Organic Semiconductors via

Hideaki Takahashi1, Raffaele Borrelli1

  • 1DISAFA, University of Torino, Grugliasco I10095, Italy.

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The generation of electrical current in semiconductors is fundamentally driven by two mechanisms: drift and diffusion. These processes are essential for the functionality and performance of semiconductor-based devices.
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The drift of charge carriers is started by an external electric field (E). Charged particles, such as electrons and holes, experience an acceleration between collisions with lattice atoms. For electrons, this results in a drift velocity (vd) given by:
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An interesting property of a conductor in static equilibrium is that extra charges on the conductor end up on its outer surface, regardless of where they originate. Consider a hollow metallic conductor with a uniform surface charge density. Since the conductor itself is in electrostatic equilibrium, there should not be any electric field inside the conductor. Now, assume a Gaussian surface enclosing the hollow portion. Applying Gauss's law, the inner surface of the hollow conductor will not...
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Transmission lines are essential components of electrical power systems. They are characterized by the distributed nature of resistance (R), inductance (L), and capacitance (C) per unit length. To analyze these lines, differential equations are employed to model the variations in voltage and current along the line.
Line Section Model
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Consider an external electric field propagating through a homogeneous medium. When the electric field crosses the surface boundary of the medium, it undergoes a discontinuity. The electric field can be resolved into normal and tangential components. The amount by which the field changes at any boundary is given by the difference between the field components above and below the surface boundary.
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