Double-Layer Electronegative Structure-Based Triboelectric Nanogenerator for Enhanced Performance Using Combined
Arun Mondal1, Mohd Faraz1, Mamta Dahiya1
1Department of Physics, Indian Institute of Technology Delhi, Hauz Khas, New Delhi 110016, India.
ACS Applied Materials & Interfaces
|August 17, 2024
Summary
A novel double-layer nanocomposite structure significantly boosts triboelectric nanogenerator (TENG) performance by enhancing surface charge generation and retention. This advancement leads to higher output power density for improved energy harvesting applications.
Area of Science:
- Materials Science
- Nanotechnology
- Energy Harvesting
Background:
- Triboelectric nanogenerators (TENGs) are crucial for harvesting mechanical energy.
- TENG performance relies on surface charge generation and retention.
- Optimizing the electronegative layer is key to improving TENG efficiency.
Purpose of the Study:
- To develop and characterize a double-layer nanocomposite structure for the electronegative layer of a TENG.
- To investigate the impact of this structure on charge generation and retention.
- To evaluate the overall performance enhancement of the TENG device.
Main Methods:
- Fabrication of a double-layer nanocomposite using PVDF/MXene and PDMS/NaNbO3.
- Characterization using Kelvin probe force microscopy (KPFM).
- Performance testing of the TENG device, measuring voltage, current, and power density.
Main Results:
- The double-layer structure achieved 150 V and 4.3 μA, yielding a power density of 134 μW/cm², approximately 5.8 times higher than a single-layer TENG.
- MXene in the PVDF matrix enhanced electron affinity for improved charge generation.
- NaNbO3 nanoparticles in PDMS increased internal polarization and trap sites for better charge retention.
Conclusions:
- The proposed double-layer nanocomposite structure significantly enhances TENG performance through improved charge generation and retention.
- This optimized TENG demonstrates potential for applications like wireless communication signal transfer.
- The findings offer a promising pathway for developing high-performance TENG devices.


