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MOS Capacitor

MOS Capacitor

A Metal-Oxide-Semiconductor (MOS) capacitor is a fundamental structure used extensively in semiconductor device technology, particularly in the fabrication of integrated circuits and MOSFETs (metal-oxide-semiconductor field-effect transistors). The MOS capacitor consists of three layers: a metal gate, a dielectric oxide, and a semiconductor substrate.
The metal gate is typically made from highly conductive materials such as aluminum or polysilicon. Beneath the metal gate lies a thin layer of...

Design Example: Capacitance Multiplier Circuit

Design Example: Capacitance Multiplier Circuit

In integrated circuit technology, a capacitance multiplier is often utilized to produce a larger capacitance value when a small physical capacitance falls short. This is achieved by a circuit that multiplies capacitance values by a factor of up to 1000, such that a 10-pF capacitor can replicate the performance of a 100-nF capacitor.
The circuit illustrated in Figure 1 below incorporates two op-amps, with the first operating as a voltage follower and the second acting as an inverting amplifier.

Capacitor With A Dielectric

Capacitor With A Dielectric

Parallel plate capacitors consist of two conducting plates separated by a certain distance. However, it is mechanically difficult to hold the large plates parallel to each other without actual contact. Hence, a dielectric layer is commonly placed between the plates, which provides an easy solution for holding the plates together with a small gap and increases the capacitance of the capacitor.
Dielectrics are non-conducting materials with no free or loosely bound electrons. When a dielectric is...

Equivalent Capacitance

Equivalent Capacitance

From the study of resistive circuits, it is understood that employing a series-parallel combination serves as an effective strategy for simplifying circuits. Capacitors can be arranged within a circuit in one of two ways: a series configuration or a parallel configuration. The way these capacitors are connected to a battery will influence both the potential drop across each individual capacitor and the size of the charge that each capacitor can store. This is determined by the specific type of...

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Related Experiment Video

Updated: Jun 16, 2025

Fabrication of Ti3C2 MXene Microelectrode Arrays for In Vivo Neural Recording

Fabrication of Ti3C2 MXene Microelectrode Arrays for In Vivo Neural Recording

Published on: February 12, 2020

Interface engineering based NiCoMoO₄/Ti₃C₂T_x MXene heterostructure for high-performance flexible supercapacitors.

Wei Li¹, Bita Farhadi², Miaomiao Liu¹

¹Faculty of Light Industry and Chemical Engineering, Dalian Polytechnic University, Dalian 116034, Liaoning, China.

Journal of Colloid and Interface Science

|August 18, 2024

Summary

Interface engineering with NiCoMoO4/MXene heterostructures significantly boosts supercapacitor performance. This novel electrode material demonstrates high specific capacitance and excellent stability, paving the way for advanced flexible electronic devices.

Keywords:

Cycling stability Flexible quasi-solid-state supercapacitors Heterostructure NiCoMoO(4)Ti(3)C(2)T(x)-MXene

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Author Spotlight: A Rapid, Microwave-Assisted Hydrothermal Synthesis Of Nickel Hydroxide Nanosheets

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Published on: August 18, 2023

Area of Science:

Materials Science
Electrochemistry
Nanotechnology

Background:

Sluggish reaction kinetics impede supercapacitor electrode performance.
Interface engineering offers a promising strategy to enhance electrochemical properties.
MXene nanosheets are susceptible to restacking, limiting their application.

Purpose of the Study:

To synthesize and characterize NiCoMoO4/MXene heterostructures for supercapacitor applications.
To investigate the role of interface engineering in improving electrode kinetics and capacitance.
To evaluate the electrochemical performance and stability of the fabricated heterostructures.

Main Methods:

Facile co-precipitation method for synthesizing NiCoMoO4/MXene heterostructures using Ti3C2Tx MXene.
Electrochemical characterization including cyclic voltammetry, galvanostatic charge-discharge, and electrochemical impedance spectroscopy.
Density functional theory (DFT) calculations to understand electronic coupling and performance enhancement.

Main Results:

The NiCoMoO4/MXene heterostructure effectively inhibits MXene restacking and exposes active sites, enhancing specific capacitance.
Optimized electrodes achieve a specific capacity of 1900 F/g at 1 A/g with 94.73% capacitance retention after 10,000 cycles at 5 A/g.
Flexible quasi-solid-state supercapacitors (FSSCs) exhibit a maximum energy density of 72.89 Wh/kg at 850 W/kg.

Conclusions:

NiCoMoO4/MXene heterojunctions are advantageous electrode materials for high-performance supercapacitors.
The enhanced electrochemical performance is attributed to improved electronic coupling within the heterostructure.
The developed FSSCs offer a promising pathway for flexible electronic devices.