High Performance Memristors Based on Imine-Linked Covalent Organic Frameworks Obtained Using a Protonation...

Area of Science:

• Materials Science
• Nanotechnology
• Electronics

Background:

• Imine-linked covalent organic frameworks (COFs) show promise for resistive random-access memory (RRAM) due to their structural and chemical stability.
• Current COF-based memristors face limitations from low imine bond conjugation and poor electron delocalization, hindering performance.
• Donor-acceptor (D-A) type COFs are particularly interesting but require optimization for RRAM applications.

Purpose of the Study:

• To investigate a protonation strategy for modifying imine bonds in D-A type COFs.
• To enhance electron delocalization and charge transfer properties within COFs for improved memristor performance.
• To develop high-performance COF-based memristors with superior endurance and reliability.

Main Methods:

• A protonation strategy was applied to modify the imine bonds of D-A type COFs (COF-BTT-BPy and COF-BTT-TAPT).
• Thin films of protonated and non-protonated COFs were fabricated into memristor devices.
• Device performance metrics including ON/OFF current ratio, driving voltage, and endurance were evaluated.

Main Results:

• Protonation significantly enhanced electron delocalization in imine bonds and lowered electron injection barriers.
• Protonated COF-BTT-BPy and COF-BTT-TAPT memristors exhibited high ON/OFF ratios (10^5) and low operating voltages.
• The protonated devices demonstrated remarkable endurance, exceeding 600 and 1300 cycles, nearly doubling the performance of non-protonated counterparts. The protonated COF-BTT-TAPT achieved the highest reported endurance.

Conclusions:

• Protonation is an effective strategy to improve the performance of imine-linked D-A type COF-based memristors.
• The enhanced electron delocalization and charge transfer stability contribute to superior device characteristics.
• This approach offers a universal pathway for designing advanced COFs for next-generation electronic memory applications.