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P-N junction

P-N junction

A p-n junction is formed when p-type and n-type semiconductor materials are joined together. At the interface of the p-n junction, holes from the p-side and electrons from the n-side begin to diffuse into the opposite sides due to the concentration gradient. This diffusion of carriers leads to a region around the junction where there are no free charge carriers, known as the depletion region. The charge density within the depletion region for the n-side and p-side can be described by the...

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Related Experiment Video

Updated: Jun 15, 2025

Developing High Performance GaP/Si Heterojunction Solar Cells

Developing High Performance GaP/Si Heterojunction Solar Cells

Published on: November 16, 2018

Improved Efficiency in WSe₂ Solar Cells Using Amorphous InO Heterocontacts.

Shifan Wang¹, Di Yan¹, Jesus Ibarra Michel¹

¹Department of Electrical and Electronic Engineering, University of Melbourne, Melbourne, Victoria 3010, Australia.

|August 23, 2024

Summary

This study reports a new van der Waals (vdW) solar cell using WSe2, achieving a record 6.37% efficiency. This demonstrates the potential of vdW materials for efficient thin-film photovoltaics.

Keywords:

InOx WSe2 photovoltaics solar cells van der Waals materials

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Published on: July 31, 2016

Area of Science:

Materials Science
Optoelectronics
Renewable Energy

Background:

Van der Waals (vdW) layered materials possess promising optoelectronic properties for photovoltaic applications.
Current vdW solar cell efficiencies are low and often lack statistical validation or detailed spectral analysis.

Purpose of the Study:

To fabricate and characterize a van der Waals solar cell using a p-type WSe2 absorber.
To provide statistical data and spectral quantum efficiency analysis for vdW solar cells.
To establish a new benchmark efficiency for vdW material-based solar cells.

Main Methods:

Fabrication of a solar cell device utilizing a p-type tungsten diselenide (WSe2) absorber layer.
Integration of a transparent indium oxide (InO2) front electron contact and a palladium (Pd) rear reflector/hole contact.
Performance characterization of multiple devices under standard test conditions (AM 1.5G, 1 sun).

Main Results:

Achieved an average 1 sun conversion efficiency exceeding 5% across 10 fabricated devices.
A champion device demonstrated a record power conversion efficiency of 6.37%.
External quantum efficiency analysis confirmed current density and showed near-unity quantum efficiency around 600 nm.

Conclusions:

This work establishes a new highest efficiency for van der Waals solar cells.
The results support the consideration of vdW materials as viable candidates for next-generation thin-film solar cells.
Statistical data and spectral analysis provide robust evidence for the performance of these devices.