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Quantum States Induced by Strong Interface Coupling in a 2D VSe2/Bi2Se3 Heterostructure
Xin Wang1, Donghui Wang1, Yuxiao Zou2
1College of Chemistry, Beijing Normal University, Beijing 100875, PR China.
Abstract:
We have successfully fabricated single-layer (SL) 1T-VSe2/Bi2Se3 heterostructures using molecular beam epitaxy (MBE), which exhibits uniform moiré patterns on the heterostructure surface. Scanning tunneling microscopy/spectroscopy (STM/STS) reveals a notable quantum state near the Fermi energy, robust across the entire moiré lattice. This quantum state peak shifts slightly across different domain ranges, suggesting an elastic strain dependence in SL VSe2, confirmed by geometric phase analysis (GPA) simulations. Density functional theory (DFT) calculations indicate that the enhanced quantum state results from charge redistribution between the substrate and the epifilm with the orbitals of Se atoms in the deformed VSe2 playing a dominant role.
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