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Updated: Jun 15, 2025

Electrochemical Preparation of Poly3,4-Ethylenedioxythiophene Layers on Gold Microelectrodes for Uric Acid-Sensing Applications
Published on: July 28, 2021
Polyethylene glycol-decorated n-type conducting polymers with improved ion accessibility for high-performance organic
Haoran Tang1, Yuanying Liang1,2, Chi-Yuan Yang3
1Institute of Polymer Optoelectronic Materials and Devices, State Key Laboratory of Luminescent Materials and Devices, Guangdong Basic Research Center of Excellence for Energy & Information Polymer Materials, South China University of Technology, Guangzhou 510640, China. msfhuang@scut.edu.cn.
Abstract:
High-performance n-type organic mixed ionic-electronic conductors (OMIECs) are essential for advancing complementary circuits based on organic electrochemical transistors (OECTs). Despite significant progress, current n-type OMIECs often exhibit lower transconductance and slower response times compared to their p-type counterparts, limiting the development of OECT-based complementary circuits. Optimizing the conjugated backbone and side chain structures of OMIECs is critical for enhancing both ion and electron transport efficiencies while maintaining a delicate balance between the two. In this study, hydrophilic polyethylene glycol (PEG) side chains were incorporated into the highly conductive n-type polymer poly(3,7-dihydrobenzo[1,2-b:4,5-b']difuran-2,6-dione) (PBFDO) backbone to achieve this goal. The incorporation of PEG chains improved ion accessibility, and by adjusting the PEG content, the electronic and ionic transport properties were fine-tuned, ultimately enhancing the performance of OECTs and related p-n complementary circuits. The n-type OECTs based on PBFDO-PEG50wt% demonstrated exceptional transfer characteristics, including a transient response time (τON) as low as 72 μs, a high geometry-normalized transconductance exceeding 400 S cm-1, and an impressive μC* value surpassing 720 F cm-1 V-1 s-1. Notably, the use of PBFDO-PEG50wt% in a complementary inverter resulted in a voltage gain of 20 V/V, more than five times higher than that achieved with unmodified PBFDO (<4 V/V). These findings highlight the importance of balancing electron and ion transport characteristics in OMIECs to achieve high performance in OECTs and their associated circuits, and they validate PEG decoration as an effective approach.

