Heterojunction photoelectric device with fast response speed and low power consumption composed of WSSe and AlN

Through the accurate calculation of density functional theory, reveal the excellent photoelectric properties of the AlN/WSSe and WSSe/AlN heterojunction. Especially, the hole mobility of the AlN/WSSe heterojunction is as high as 3919 cm²Vs^-1in armchair direction, and the hole mobility of the WSSe/AlN heterojunction is as high as 4422 cm²Vs^-1in the zigzag direction. Interestingly, when two H atoms are adsorbed in the WSSe surface, the Gibbs free energy change are -0.093 eV and -0.984 eV, which tends to zero, which can promote the spontaneous reaction of electrocatalytic water decomposition to produce H₂. In addition, the AlN/WSSe heterojunction exhibits significant photoelectric effect photocurrent (1.15 a₀²/photon) in the armchair direction and the heterojunctions have lower threshold voltage (1.5 V), that indicate the AlN/WSSe and WSSe/AlN heterojunction have great application prospect in manufacturing high-performance optoelectronic devices with fast response and low power consumption.