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Modeling Study of Si3N4 Waveguides on a Sapphire Platform for Photonic Integration Applications
Diandian Zhang1, Shui-Qing Yu1,2, Gregory J Salamo1,2
1Department of Electrical Engineering and Computer Science, University of Arkansas, Fayetteville, AR 72701, USA.
Materials (Basel, Switzerland)
|August 29, 2024
Summary
Silicon nitride waveguides on sapphire substrates demonstrate excellent performance for photonic integrated circuits (PICs). These waveguides offer high field confinement and low bending losses, making them ideal for integrating with III-V lasers.
Area of Science:
- Photonics and optical engineering
- Materials science for integrated devices
- Semiconductor device fabrication
Background:
- Sapphire's properties (transparency, stability) make it suitable for photonic integration.
- Group III-V lasers are key active components for high-performance photonic integrated circuits (PICs).
Purpose of the Study:
- To analyze silicon nitride optical waveguides on sapphire substrates for photonic integration.
- To evaluate waveguide performance across a spectral window relevant to III-V lasers (800-2400 nm).
Main Methods:
- Numerical simulation using Comsol Multiphysics software.
- Analysis of waveguide structures including pedestal and SiO2 bottom cladding.
- Evaluation of confinement factor and bending loss at various wavelengths.
Main Results:
- Achieved a high confinement factor of approximately 90% near the single-mode limit.
- Demonstrated low bending losses (e.g., ~0.01 dB) at radii as small as 40 μm for specific wavelengths.
- Identified SiO2 bottom cladding as effective in reducing substrate influence and improving performance.
Conclusions:
- Silicon nitride waveguides on sapphire are promising passive components for high-performance PICs.
- The platform supports tightly confined waveguides with small bending radii and low propagation losses.
- Potential for cost-effective integration of active and passive photonic components on a single substrate.
