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Related Concept Videos

Determination of Crystal Structures01:29

Determination of Crystal Structures

138
In the late 1800s, the revelation that light extended beyond visible wavelengths led to the discovery of X-rays by Wilhelm Roentgen. Recognized as high-energy electromagnetic radiation with short wavelengths, X-rays prompted exploration into their interaction with crystals. Max von Laue proposed in 1912 that the periodic arrangement of atoms, ions, or molecules in crystals would cause them to diffract X-rays, a hypothesis confirmed through experiments with copper sulfate and zinc sulfide...
138

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Related Experiment Video

Updated: May 5, 2026

Fabrication of Flexible Image Sensor Based on Lateral NIPIN Phototransistors
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Robust Pixel Design Methodologies for a Vertical Avalanche Photodiode (VAPD)-Based CMOS Image Sensor.

Akito Inoue1, Naoki Torazawa1, Shota Yamada1

  • 1Panasonic Industry Co., Ltd., 1006, Oaza Kadoma, Kadoma-shi 571-8506, Osaka, Japan.

Sensors (Basel, Switzerland)
|August 29, 2024
PubMed
Summary
This summary is machine-generated.

This study introduces a new pixel design for vertical avalanche photodiode-based CMOS image sensors. The design ensures stable operation under varying conditions and intense light, improving performance and reliability.

Keywords:
CMOS image sensors (CISs)guard ringrobust pixel designsingle-photon avalanche diodes (SPADs)time-of-flight sensors

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Area of Science:

  • Solid-state physics
  • Image sensor technology
  • Microelectronics engineering

Background:

  • Traditional CMOS image sensors face challenges with pixel isolation, sensitivity to environmental variations, and performance under intense light.
  • Vertical avalanche photodiodes (VAPDs) offer potential for enhanced sensitivity but require robust pixel design for practical application.

Purpose of the Study:

  • To develop and validate a robust pixel design methodology for VAPD-based CMOS image sensors.
  • To address critical practical factors including guard-ring-free isolation, insensitivity to voltage/temperature, and stable operation under intense illumination.

Main Methods:

  • Developed a guard-ring-free pixel isolation layout by optimizing the trade-off between electric field concentration and isolation.
  • Implemented a global feedback resistor to suppress variations in photon detection efficiency and dark count rate.
  • Introduced an in-pixel overflow transistor to improve resistance to strong illumination.

Main Results:

  • The guard-ring-free design was validated through simulation and experimental characterization.
  • Global feedback effectively minimized device characteristic variations across different voltages and temperatures.
  • The fabricated VAPD-CIS demonstrated robust performance, verified by testing 122 chips and a 1000-hour high-temperature/intense-light test.

Conclusions:

  • The proposed pixel design methodology significantly enhances the robustness and stability of VAPD-based CMOS image sensors.
  • The design overcomes key limitations, enabling reliable sensor operation in demanding environmental conditions and high light intensities.