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Low-loss and low-cross talk polarization-insensitive multimode silicon waveguide crossing
Optics Letters
|August 29, 2024
Summary
This study presents a polarization-insensitive silicon waveguide crossing optimized for performance. The device achieves low insertion loss and cross talk across a wide bandwidth, ideal for integrated photonics.
Area of Science:
- Photonics
- Integrated Optics
- Materials Science
Background:
- Silicon photonics is crucial for optical communication.
- Waveguide crossings are essential components in integrated photonic circuits.
- Achieving polarization-insensitivity and low loss in multimode waveguide crossings remains a challenge.
Purpose of the Study:
- To design and experimentally validate a polarization-insensitive multimode silicon waveguide crossing.
- To optimize the device for wide bandwidth, low insertion loss (IL), and low cross talk (CT).
- To achieve a compact device footprint.
Main Methods:
- Utilized particle swarm optimization (PSO) algorithm for device parameter tuning.
- Employed finite difference time domain (FDTD) method for electromagnetic simulation.
- Experimental characterization of the fabricated silicon waveguide crossing.
Main Results:
- The optimized device has a compact footprint of 11.92 μm × 11.92 μm.
- Achieved insertion loss below 0.67 dB and cross talk below -28.6 dB for TE0 and TE1 modes (1520-1600 nm).
- Demonstrated superior performance for TM0 mode (IL < 0.48 dB, CT < -36.3 dB) and TM1 mode (IL < 0.62 dB, CT < -28 dB).
Conclusions:
- The developed silicon waveguide crossing exhibits excellent polarization-insensitive performance.
- The device meets key metrics for insertion loss, cross talk, and bandwidth.
- This work contributes to the advancement of compact and efficient integrated photonic devices.
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