Distinguishing optical and acoustic phonon temperatures of supported 2D materials by nanosecond time-resolved Raman...

Upon laser irradiation, 2D materials experience a cascading energy transfer from electrons to optical phonons (OPs) and then to acoustic phonons (APs), resulting in a significant thermal non-equilibrium among energy carriers. This non-equilibrium presents challenges for Raman-based thermal characterization, as Raman scattering measures only OP temperature rise, while APs are the primary energy carriers. Despite recent efforts to address this issue, OP-AP thermal non-equilibrium in supported 2D materials remains poorly resolved. Here, we develop a method to distinguish the OP and AP temperature rises based on their different temporal thermal responses under laser irradiation: the OP-AP temperature difference responds almost immediately (∼a few to tens of ps), while the AP temperature rise takes longer to establish (∼tens of ns). Using energy transport-state resolved Raman, we probe the transient thermal response of Si-supported nm-thick MoS₂ from 20 to 100 ns. We find that the OP-AP temperature difference exceeds 120% of the AP temperature rise under ∼0.439 µm radius laser heating. The intrinsic interfacial thermal conductance of the samples, based on the true AP temperature rise, varies from 0.199 to 1.46 MW·m^-2·K^-1, showing an increasing trend with sample thickness.