Processes to enable hysteresis-free operation of ultrathin ALD Te p-channel field-effect transistors
These videos have been matched automatically. Contact us if they are not relevant.
These videos have been matched automatically. Contact us if they are not relevant.
View abstract on PubMed
Summary
This summary is machine-generated.We developed a novel tellurium (Te) atomic layer deposition (ALD) process to overcome limitations in p-type Te transistors. This method significantly reduces hysteresis and off-state current for improved device performance.
Area Of Science
- Materials Science
- Semiconductor Physics
- Nanotechnology
Background
- Tellurium (Te) is a promising p-type semiconductor material.
- Existing Te-based devices suffer from significant I-V hysteresis and high off-state leakage current, hindering practical applications.
- These limitations impede the use of Te in ultrathin p-channel devices.
Purpose Of The Study
- To develop a novel atomic layer deposition (ALD) process for p-type tellurium (Te) field-effect transistors (FETs).
- To address and overcome the critical limitations of large hysteresis and high off-state leakage current in Te-based devices.
- To identify the origins of hysteresis and off-current in Te FETs.
Main Methods
- A novel Te ALD process was developed, incorporating a TeO2 seed layer and Al2O3 passivation.
- 77 K operation studies were conducted to analyze device behavior.
- Passivation process optimization and channel thickness modulation were performed.
Main Results
- The optimized Te FETs exhibited minimal hysteresis (< 23 mV) and high field-effect mobility (33 cm^2 V^-1 s^-1).
- At 77 K, an ultralow off-current (~1 x 10^-14 A), high on/off ratios (~10^8), and a steep subthreshold swing (79 mV dec^-1) were achieved.
- The study identified interfacial defects at the metal-Te contact as the origin of high off-state current.
Conclusions
- The developed Te ALD process effectively mitigates hysteresis and off-state current in p-type Te FETs.
- The findings demonstrate that interfacial defects are the primary cause of high off-state current, which can be resolved through process optimization.
- This work paves the way for the successful application of Te in ultrathin p-channel devices by overcoming major fabrication obstacles.
These videos have been matched automatically. Contact us if they are not relevant.
These videos have been matched automatically. Contact us if they are not relevant.
Related Concept Videos
Field-effect transistors (FETs) are integral to electronic circuits and distinguished by their three-terminal setup: the gate, drain, and source. These transistors operate as unipolar devices, which utilize either electrons or holes as charge carriers, in contrast to bipolar transistors, which use both types of carriers. The primary function of the FET is to modulate the flow of these carriers from the source to the drain through a channel. The voltage difference between the gate and source...
Biasing a Junction Field Effect Transistor (JFET) is crucial for setting operational parameters and ensuring efficient functioning in electronic circuits. JFETs are characterized by using a single carrier type in N-channel or P-channel configurations, where the channel is surrounded by PN junctions. These junctions are central to the device's ability to control current flow.
In an N-channel JFET, the structure consists of N-type material forming the channel on a P-type substrate, with the...
Depletion-mode MOSFETs represent a unique subset of MOSFET technology, functioning fundamentally differently from their enhancement-mode counterparts. Unlike enhancement MOSFETs, which require a positive gate-source voltage (Vgs) to turn on, depletion-mode MOSFETs are inherently conductive and "normally on" devices.
The primary characteristic of depletion-mode MOSFETs is their ability to conduct current between the drain and source terminals without gate bias. This inherent conductivity...
Enhancement-mode MOSFETs are pivotal components in electronics, distinguished by their capacity to act as highly efficient switches. They are part of the larger family of metal-oxide Semiconductor Field-Effect Transistors (MOSFETs). They are available in two types: p-channel and n-channel, each tailored to specific polarity operations.
In their basic form, enhancement-mode MOSFETs are typically non-conductive when the gate-source voltage (Vgs) is zero. This default 'off' state means no...
Metal-oxide-semiconductor field-effect Transistors, or MOSFETs, play a critical role in electronic circuits. They are primarily utilized for amplifying and switching signals.
Various vital parameters influence their functionality, which is crucial for theory and electronics applications. First, channel dimensions, precisely length, and width, are pivotal. The size of these channels affects the transistor's ability to carry current and switching speeds; shorter channels typically enable...
Junction Field Effect Transistors (JFETs) exhibit specific operational characteristics based on the relationship between the drain current (id) and the drain-source voltage (Vds), along with varying gate-source voltages (Vgs).
The core of a JFET's operation is controlling drain current by modulating the gate-source voltage. When the drain and gate voltage are set to zero, the JFET exhibits no net current flow, representing a state of equilibrium. The drain current increases linearly as the...