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Defect Passivation: Physisorption or Chemisorption? A Nonadiabatic Molecular Dynamics Study.
1College of Chemistry and Chemical Engineering, Inner Mongolia University, Hohhot 010021, PR China.
The Journal of Physical Chemistry Letters
|September 5, 2024
Summary
Defect passivation in InSe semiconductors is crucial for solar energy. Chemisorption passivators effectively eliminate charge recombination centers, enhancing semiconductor performance for solar energy conversion.
Area of Science:
- Materials Science
- Solid-State Physics
- Photovoltaics
Background:
- Nonradiative charge recombination due to defects impedes semiconductor applications in solar energy.
- Defect passivation is a key strategy to mitigate recombination centers and improve efficiency.
Purpose of the Study:
- To investigate the impact of passivator adsorption configurations on defect passivation in InSe semiconductors.
- To understand the microscopic mechanisms governing photogenerated charge carrier dynamics after passivation.
Main Methods:
- Utilized nonadiabatic molecular dynamics (NAMD) simulations.
- Employed time-dependent density functional theory (TD-DFT) for accurate electronic structure calculations.
Main Results:
- Physisorption passivators failed to eliminate recombination centers, leading to rapid nonradiative charge recombination.
- Chemisorption passivators formed covalent bonds with indium, effectively removing recombination centers.
- Charge recombination time was extended by over tenfold with chemisorption passivators due to reduced nonadiabatic coupling.
Conclusions:
- Passivator adsorption configuration significantly influences defect passivation efficacy in InSe.
- Chemisorption passivators are essential for effective defect passivation, enhancing charge carrier dynamics for solar energy applications.
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