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Ultrahigh On/Off Ratio (110) Diamond Transistors with Exceptional Reproducibility of Normally Off Characteristics
Wenchao Zhang1,2, Benjian Liu1,2, Sen Zhang1,2
1National Key Laboratory of Science and Technology on Advanced Composites in Special Environments, Harbin Institute of Technology, Harbin 150080, China.
The Journal of Physical Chemistry Letters
|September 5, 2024
Summary
Researchers developed high-performance, normally off diamond field-effect transistors (FETs) for energy-efficient complementary circuits. This breakthrough addresses challenges in p-channel FETs, paving the way for advanced wide bandgap semiconductor power electronics.
Area of Science:
- Materials Science
- Electrical Engineering
- Semiconductor Physics
Background:
- Monolithic integrated energy-efficient complementary circuits are vital for wide bandgap semiconductor applications.
- P-channel field-effect transistors (FETs) face challenges due to low hole density and mobility.
- Diamond exhibits excellent electrical properties and thermal conductivity, making it a promising material.
Purpose of the Study:
- To fabricate normally off diamond FETs with enhanced performance.
- To overcome the limitations of traditional p-channel FETs.
- To enable large-scale application of wide bandgap semiconductor-based power electronics.
Main Methods:
- Fabrication of normally off diamond FETs using a low work function metal gate and (110) hydrogen-terminated diamond.
- Utilized a high-quality SiO2 layer for complete channel depletion and high gating efficiency.
- Investigated the effect of thermal desorption of negatively charged acceptors on carrier scattering.
Main Results:
- Achieved exceptional reproducibility of normally off characteristics with a threshold voltage of -0.37 ± 0.3 V.
- Demonstrated record-high on/off ratio (>1010), high current density (∼200 μA·μm-1), and ultralow off-state current (∼fA·μm-1).
- Realized high breakdown voltage (-676 V) and low static standby power consumption.
Conclusions:
- The developed diamond FETs offer superior performance for energy-efficient complementary circuits.
- Thermal desorption effectively reduces carrier scattering, enhancing device performance.
- This work lays the foundation for advancing wide bandgap semiconductor power electronics.
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