A novel method for the synthesis of MoSSe using an (Et₄N)₂[Mo₃S₄Se₃Br₆] complex as the sole precursor

MoSSe is a semiconducting material with a layered structure similar to MoS₂ and MoSe₂, which shows potential applications in optoelectronics, solar cells, sensing, and catalysis. Synthesis of this material with a controllable structure and chemical composition represents a great challenge. Herein, we report a new method for the synthesis of MoSSe by employing an [Et₄N]₂[Mo₃S₄Se₃Br₆] complex as the sole precursor. Thermal annealing of this complex under an Ar atmosphere at moderate temperatures ranging from 350 °C to 650 °C resulted in the formation of pure MoSSe. The morphology and structure of MoSSe were characterized using SEM, HRTEM, XRD, Raman spectroscopy, X-ray absorption near-edge structure (XANES) and extended X-ray absorption fine structure (EXAFS). The effects of annealing temperature on the structure of MoSSe were also examined.